silicon crystal

During the deposition of nanocrystalline silicon carbide films, with the increase of tetramethylsilane concentration in the reactive gas source, the crystal structure of silicon carbide whose grain size decreases changes from hexagonal to cubic and the particle shape changes from spherical to cauliflower-like.

在制备纳米碳化硅薄膜的沉积过程中，随着四甲基硅烷浓度的增大，纳米碳化硅晶体结构由六方转变为立方结构，颗粒形状由球状变为菜花状。

互联网摘选

We can change the behavior of a pure silicon crystal by doping it.

当纯矽的晶体和其它不纯物混杂在一起,矽的本质会改变.

网络文摘精选

Diamond-like carbon ( DLC ) films were prepared on the single crystal silicon substrate by way of DC-RFPECVD.

采用射频 - 直流等离子体增强 化学气相沉积 技术在单晶硅衬底上沉积了类金刚石薄膜.

互联网摘选

In the light of fractal theory and the theory of crystal nucleation and growth, we have discussed the effect of temperature ramp rate on the sizes of the formed silicon particles.

根据晶体生长理论，讨论了升温速率的高低与所形成的纳米硅颗粒大小的关系。

互联网摘选

The Surface Effect of FZ Single Crystal Silicon Grown in Hydrogen Atmosphere on ESR

含氢单晶硅的ESR面效应

互联网摘选

The result reveals the significant size effect that the conductivity of silicon films along the film plane is lower than that value in bulk silicon crystal at corresponding temperature and decreases with the decreasing of film thickness.

模拟表明薄膜面向热导率小于相应的大体积值，并随膜厚度减小而减小，具有显著的尺寸效应。

互联网摘选

Molecular dynamics study on thermal conductivity of silicon crystal

硅晶体热传导性能的分子动力学模拟

互联网摘选

The length and breadth of crystal region of silicon dioxide/ wood composite based on the Scherrer formula was unchanged.

经Scherrer公式计算表明，二氧化硅／木材复合材料结晶区的宽度及长度均不变。

互联网摘选

Positron lifetime change during isochronal annealing of hydrogen FZ silicon crystal

氢气氛区熔硅单晶等时退火过程中的正电子寿命谱研究

互联网摘选

Solar cell components, the use of crystal silicon and polysilicon and amorphous silicon solar cells monomer.

太阳能电池组件, 采用单晶矽和多晶矽及非晶矽太阳能电池单体.

网络文摘精选

Local Mode and the Infrared Absorption of Substitutional Carbon in Silicon Crystal

代位式碳在硅单晶中的局域模与红外吸收

互联网摘选

Adding Na element would cause the growth velocity of silicon crystal to quicken.

钠元素的变质作用可能在于改变硅晶体生长环境促使晶体生长速度加快，超过临界生长速度值，迫使共晶硅晶体的形态发生改变。

互联网摘选

This papers models and analyses the silicon crystal 100 surface reconstruction and relaxation with the molecular dynamics simulation and first principal theory abinitio calculation.

本文利用分子动力学模拟方法和量子物理从头算法，对单晶硅100表面的重构和弛豫进行模拟分析。

互联网摘选

Effects of temperature coefficient of surface tension on the silicon crystal Czochralski growth

表面张力温度系数对硅单晶生长的影响

互联网摘选

Numerical Analysis of Coil Step to Improve FZ Silicon Crystal Growth

线圈台阶对区熔硅单晶生长影响的数值计算分析

互联网摘选